smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3424 features 4.5-v drive available low on-state resistance r ds(on)1 =1.5m max. (v gs =10v,i d =24a) low gate charge q g = 34 nc typ. (i d =48a,v dd = 24v, v gs =10v) built-in gate protection diode surface mount device available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 48 a i dp * 192 a power dissipation t c =25 50 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =24a 13 s r ds(on)1 v gs =10v,i d =24a 7.7 11.5 m r ds(on)2 v gs =4.5v,i d =24a 10.5 17.0 m input capacitance c iss 1900 pf output capacitance c oss 580 pf reverse transfer capacitance c rss 270 pf turn-on delay time t on 14 ns rise time t r 13 ns turn-off delay time t off 61 ns fall time tf 22 ns total gate charge q g 34 nc gate to source charge q gs 6.4 nc gate to drain charge q gd 9.1 nc v ds =10v,v gs =0,f=1mhz i d =24a,v gs(on) =10v,r g =10 ,v dd =15v draintosourceon-stateresistance i d =48a, v dd =24v, v gs =10v 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification
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